UPS, XPS, AES STUDIES OF TeTHIN FILMS DEPOSITED ON Si(100)2×1

S. Di Nardo, L. Lozzi, M. Passacantando, P. Picozzi and S. Santucci
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S. Di Nardo: Dipartimento di Fisica, Universita' degli Studi de L'Aquila, 67010 Coppito (AQ), Italy
L. Lozzi: Dipartimento di Fisica, Universita' degli Studi de L'Aquila, 67010 Coppito (AQ), Italy
M. Passacantando: Dipartimento di Fisica, Universita' degli Studi de L'Aquila, 67010 Coppito (AQ), Italy
P. Picozzi: Dipartimento di Fisica, Universita' degli Studi de L'Aquila, 67010 Coppito (AQ), Italy
S. Santucci: Dipartimento di Fisica, Universita' degli Studi de L'Aquila, 67010 Coppito (AQ), Italy

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 589-592

Abstract: This work represents the first complete study of the interaction between Te and Si in very thin films of tellurium grown at room temperature on Si(100)2×1surfaces. In particular, the electronic properties have been investigated by UPS and XPS measurements and information on growth of tellurium on silicon have been obtained by AES measurements. Our results indicate that the interaction between tellurium and silicon is weak, taking the characteristic behavior of simple metals. Increasing the film thickness, the growth mode is one layer, completed with about 2 Å of Te nominal coverage, plus islanding, until the thickness reaches the value of about 10 Å, followed by coalescence of islands. When tellurium has completed a layer, the valence band surface states of silicon are quenched.

Date: 1994
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DOI: 10.1142/S0218625X94000734

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