AN STM STUDY OF THE(2×4)ANDc(4×4)RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY

A.R. Avery, D.M. Holmes, T.S. Jones and B.A. Joyce
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A.R. Avery: Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK
D.M. Holmes: Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK
T.S. Jones: Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK
B.A. Joyce: IRC for Semiconductor Materials, Imperial College, London, SW7 2AB, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 621-624

Abstract: Atomic resolution scanning tunneling microscopy (STM) has been used to study the Asterminated(2×4)andc(4×4)reconstructions formed on GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Filled states STM images of the(2×4)surface always showed unit cells consisting of two As dimers in the top layer. Cooling this surface under an As flux led initially to a highly kinked(2×4)phase before the transition to thec(4×4)structure. At no point were three As dimers observed in the top layer for the(2×4)unit cell. Thec(4×4)structure involves the chemisorption of a second layer of As onto an already As-terminated surface. STM images of this surface showed a series of bright rectangular blocks consisting, when complete, of three pairs of As atoms.

Date: 1994
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DOI: 10.1142/S0218625X94000801

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