GROWTH OFGeONIn-ADSORBEDSi(111)SURFACES STUDIED BY UHV-REM

H. Minoda, Y. Tanishiro, N. Yamamoto and K. Yagi
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H. Minoda: Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan
Y. Tanishiro: Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan
N. Yamamoto: Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan
K. Yagi: Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan

Surface Review and Letters (SRL), 1995, vol. 02, issue 01, 1-8

Abstract: Growth ofGeon In-adsorbedSi(111)$\sqrt{3}\times \sqrt{3}$and4×1surfaces was studied by REM-RHEED. Indium atoms were segregated to the topmost surface duringGedeposition. The formation of the1×1structure, which is one of the In-adsorbed structures on theGe(111)surface, was observed on both the$\sqrt{3}\times \sqrt{3}$structure and the4×1surface structures. Suppression of two- and three-dimensional island nucleation of Ge by In predeposition was noticed below 430°C on both surface structures. The critical thickness at which the layer growth mode changed to the island growth mode on the4×1surface structure was larger than that on the$\sqrt{3}\times \sqrt{3}$surface structure. Apparent surface diffusion lengths ofGechanged after 2 ML deposition ofGeon the$\sqrt{3}\times \sqrt{3}$surface structure.

Date: 1995
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DOI: 10.1142/S0218625X95000029

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