STRUCTURAL ANALYSIS OF THE INITIAL INTERACTION BETWEEN OXYGEN AND A CLEANSi(100)BY TIME OF FLIGHT AND RECOILING SPECTROSCOPY

A. Bousetta, C.C. Hsu and Y. Wang
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A. Bousetta: Department of Chemistry, University of Houston, Houston, TX 77204–5640, USA
C.C. Hsu: Department of Chemistry, University of Houston, Houston, TX 77204–5640, USA
Y. Wang: Department of Chemistry, University of Houston, Houston, TX 77204–5640, USA

Surface Review and Letters (SRL), 1995, vol. 02, issue 02, 171-176

Abstract: The structure of bothSi(100)in situthermally annealedSi(100)at 1373 K andSi(100)exposed to dry oxygen at room temperature in the range 5 to 1700 Langmuirs, have been studied using time of flight and recoiling spectroscopy (TOF-SARS). Structural analyses were performed by recording the intensities of recoiled oxygen and silicon ions as a function of azimuthal angle. The results show that (1) the clean annealedSi(001)is dimerized, (2) oxygen chemisorbs at the surface at the Si-unsaturated bond, which are left unoccupied after the(2×1)reconstruction, and (3) at 100 L and above the Si surface is reconstructed into a(1×1)structure with the oxygen binding to the broken Si-Si dimer bonds.

Date: 1995
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DOI: 10.1142/S0218625X95000182

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