INFLUENCE OF A TIP/SAMPLE INTERACTION ON SCANNING TUNNELING SPECTROSCOPY DATA

V.G. Zavodinsky and I.A. Kuyanov
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V.G. Zavodinsky: Institute of Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 5 Radio Str., 690041, Vladivostok 41, Russia
I.A. Kuyanov: Research Physical and Technical Institute, Far Eastern State University, 25 Uborevicha Str., 690600, Vladivostok, Russia

Surface Review and Letters (SRL), 1995, vol. 02, issue 02, 219-223

Abstract: The electronic states and the tunnel current for the W/Si and W/Al tip/sample systems were calculated by the first-principles discrete-variational method of the local-density approximation. It was found that the local-electronic structure of the Si surface resembles that of a free sample even for the tip/sample distances of 2–3 Å. The electronic structure of the Al surface is more sensitive to the tip/sample interaction and approaches the free surface form when the tip/sample distance is larger than 4 Å. The local density of states of the W tip also depends on the tip/sample distance and must be taken into account in the tunnel-current calculations and in the interpretations of the STS data.

Date: 1995
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DOI: 10.1142/S0218625X95000248

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