ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION

F. Flores
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F. Flores: Departamento de Física de la Materia Condensada, Universidad Autónoma, 28049 Madrid, Spain

Surface Review and Letters (SRL), 1995, vol. 02, issue 04, 513-537

Abstract: Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.

Date: 1995
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DOI: 10.1142/S0218625X95000480

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