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ATOMIC STRUCTURE OF THESi(100)-(5×3)-AuSURFACE

G. Jayaram and L.D. Marks
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G. Jayaram: Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
L.D. Marks: Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA

Surface Review and Letters (SRL), 1995, vol. 02, issue 06, 731-739

Abstract: An atomic structure model for the5×3phase observed on annealingAudeposited on cleanSi(100)surfaces at room temperature is proposed from an ultrahigh-vacuum transmission electron microscopy imaging and diffraction study. The basic structure is made of silicon and gold atoms arranged in four parallel rows on the surface, and two parallel rows of gold atoms in the third layer in the bulk. The spacing between these subsurface gold rows results in the application of a compressive strain to the two outer surface rows. A combination of such structural units arranged in5×3and$\surd{26} \times 3$geometries satisfactorily explains earlier scanning tunneling microscopy, and current transmission electron microscopy data.

Date: 1995
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DOI: 10.1142/S0218625X95000662

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