SIZE-SELECTIVE MEASUREMENTS OF SILICON-CLUSTER POLARIZABILITIES BY A CLUSTER-BEAM DEFLECTION TECHNIQUE

J. Woenckhaus, R. Schäfer and J.A. Becker
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J. Woenckhaus: Institut für Physikalische Chemie und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg 35032 Marburg/Lahn, Germany
R. Schäfer: Institut für Physikalische Chemie und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg 35032 Marburg/Lahn, Germany
J.A. Becker: Institut für Physikalische Chemie und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg 35032 Marburg/Lahn, Germany

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 371-375

Abstract: Average static electric polarizabilities of small and middle silicon-cluster size ranges have been measured employing a mass-selective molecular beam deflection method. The largest studied clusters containedN=60atoms of silicon. The polarizabilities of the semiconductor clusters are compared to the results obtained for metal clusters. Especially, the measurements of the midsized semiconductor clusters Si30–Si45are discussed with regard to the predicted spherical cage-like structures which have been recently by Röthlisbergeret al.1The results for the larger clusters are analyzed in terms of recent experiments of photoluminescence of small silicon nanocrystallites.2

Date: 1996
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DOI: 10.1142/S0218625X9600067X

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