POSITIVE AND NEGATIVE IONIZATION PROBABILITIES OF ATOMS SPUTTERED FROMC60

P. Joyes, R.J. Tarento and J. van de Walle
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P. Joyes: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
R.J. Tarento: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
J. van de Walle: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 777-780

Abstract: We study the positive and negative ionization probabilitiesP+andP−of atoms sputtered fromC60at energyEc. As the atom leaves the target molecule, its atomic level progressively decouples from the target levels; this can be described by means of the Anderson Hamiltonian with time-dependent parameters. In a first part we neglect the repulsion between electrons and study the positive ionization. We present an exact numerical solution of the Schrödinger equation. We obtain forP+(Ec)a power-law dependence with an exponent slightly varying withEc. This dependence is different from the exponential law given by another commonly used model. In a second part we introduce an intra-atomic repulsion between electrons which allows us to calculate negative ionization probabilities.

Date: 1996
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DOI: 10.1142/S0218625X9600139X

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