LOW-DAMAGE SURFACE TREATMENT BY GAS CLUSTER-ION BEAMS

M. Akizuki, M. Harada, Y. Miyai, A. Doi, T. Yamaguchi, J. Matsuo, G.H. Takaoka, C.E. Ascheron and I. Yamada
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M. Akizuki: Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan
M. Harada: Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan
Y. Miyai: Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan
A. Doi: Microelectronics Research Center, Sanyo Electric Co. Ltd., Ohmori, Anpachi-gun, Gifu 503–01, Japan
T. Yamaguchi: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
J. Matsuo: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
G.H. Takaoka: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
C.E. Ascheron: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
I. Yamada: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 891-895

Abstract: Low-damage irradiation effects of gas cluster-ion beams have been studied at acceleration voltages below 20 kV. The surfaces of targets have been smoothened significantly byCO2-cluster-ion irradiation at normal incidence. Si substrate surfaces have been cleaned and exhibited low damage afterCO2- and Ar-cluster-ion irradiation at low doses. In the case ofCO2-cluster-ion irradiation,SiO2film of about 5.5-nm thickness have grown on Si substrate at room temperature. A damaged layer of less than 2.5-nm thickness has been formed underneath theSiO2film.

Date: 1996
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DOI: 10.1142/S0218625X96001601

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