FORMATION AND MODIFICATION OF MESOSCOPIC STRUCTURES ON GRAPHITE (HOPG) AND SILICON SURFACES BY MEANS OF SCANNING TUNNELING MICROSCOPY

R. Czajka, A. Kasuya, A. Wawro, N. Horiguchi and Y. Nishina
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R. Czajka: Institute for Materials Research, Tohoku University, Sendai 980, Japan;
A. Kasuya: Institute for Materials Research, Tohoku University, Sendai 980, Japan
A. Wawro: Institute for Materials Research, Tohoku University, Sendai 980, Japan
N. Horiguchi: Institute for Materials Research, Tohoku University, Sendai 980, Japan
Y. Nishina: Institute for Materials Research, Tohoku University, Sendai 980, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 961-967

Abstract: This paper presents results of our experimental investigations of the adsorption and interaction of microclusters on some crystalline surfaces to form regular arrangements. Microclusters were produced and deposited up to a monolayer coverage on the c-plane of graphite (HOPG) or Si(111) substrates by thermal evaporation, laser ablation, or deposition from STM tip. A rectangular lattice arrangement ofSen(n=5–8)ring cluster has been fabricated for the first time on the HOPG. Also, arrays of Au clusters with a well-controlled diameter, desired periodicity, and size have been obtained by applying a sequence of voltage pulses between the STM tip and the substrate. A variety of carbon clusters have been produced by laser modification ofC60fullerenes, and observed by means of scanning tunneling microscope (STM). Finally, various nanometer-scale structures have been modified by applying different bias voltages (between tip probe and sample) or induced by thermal treatment.

Date: 1996
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DOI: 10.1142/S0218625X96001728

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