INFLUENCE OF THE METALLIC CLUSTER BAND DEGENERACY ON THE CHARGE TRANSFER BETWEEN METALLIC CLUSTER AND SEMICONDUCTOR SUBSTRATE

R.J. Tarento, P. Joyes and J. van de Walle
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R.J. Tarento: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
P. Joyes: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
J. van de Walle: Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 969-971

Abstract: A self-consistent analysis of the charge transallographie semiconductor has been investigated with respect to the cluster size, the metal-band degeneracy, and the semiconductor doping concentration. The calculation has been carried out with the Tersoff idea on the pinning of the Fermi level.

Date: 1996
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DOI: 10.1142/S0218625X9600173X

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