MOLECULAR-DYNAMICS SIMULATION OF SURFACE SPUTTERING BY ENERGETIC RARE-GAS CLUSTER IMPACT

Z. Insepov and I. Yamada
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Z. Insepov: Ion Beam Engineering Experimental Laboratory, Kyoto University, 606 Kyoto, Japan
I. Yamada: Ion Beam Engineering Experimental Laboratory, Kyoto University, 606 Kyoto, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 1023-1027

Abstract: The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated${\rm{Ar}}_n^ - $cluster ions with n~55–200 and energies of 10–100 eV per cluster atom. The sputtering yield Y can be described by a power dependencyY∝E2.35on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.

Date: 1996
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DOI: 10.1142/S0218625X96001832

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