CLUSTER ION BOMBARDMENT-INDUCED SURFACE DAMAGE OF Si

C.E. Ascheron, M. Akizuki, J. Matsuo, Z. Insepov, G.H. Takaoka and I. Yamada
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C.E. Ascheron: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
M. Akizuki: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
J. Matsuo: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
Z. Insepov: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
G.H. Takaoka: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan
I. Yamada: Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo Kyoto 606, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 1045-1049

Abstract: Surface damage of single-crystalline Si caused by irradiation with Ar-ion cluster beams of different energies has been studied in comparison with that caused by Ar-monomer ion beams. The defected layers have been characterized by RBS channeling, XTEM, and ellipsometry. The experimental results are interpreted on the basis of TRIM and molecular dynamics simulations of the interaction processes with the target. It is found that cluster irradiation damages only a very thin near-surface layer which has a smooth interface to the undamaged substrate. Cluster-ion bombardment forms an oxide layer on the surface by the activation of adsorbed O atoms and substrate atoms.

Date: 1996
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DOI: 10.1142/S0218625X9600187X

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