OPTICAL PROPERTIES OF CARBON CLUSTERS EMBEDDED INSiO2FILMS

S. Hayashi, M. Kataoka, H. Koshida and K. Yamamoto
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S. Hayashi: Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan
M. Kataoka: Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan
H. Koshida: Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan
K. Yamamoto: Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 1095-1100

Abstract: Raman spectra were measured for carbon-dopedSiO2thin films prepared by an rf cosputtering method. The changes in the spectra were systematically studied as a function of the annealing temperature. From a detailed analysis of the spectra, the following conclusions were drawn. In the as-deposited films, very small carbon clusters are embedded in theSiO2matrices. When the films are annealed at 600°C, graphite-likesp2bonds begin to develop in the clusters. Upon annealing with higher temperatures, the size ofsp2bond clusters increases. However, the growth of graphite microcrystals can be ruled out, since high-resolution transmission electron microscopic images of the samples annealed at 1000°C do not show lattice fringes due to graphite microcrystals. The samples annealed at 1000°C were found to exhibit an extinction hump around 220 nm, very similar to that seen in the interstellar extinction spectra.

Date: 1996
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DOI: 10.1142/S0218625X96001959

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