NONEXPONENTIAL DECAY OF VISIBLE LUMINESCENCE FROM POROUS SILICON: EXCITON LOCALIZATION AND HOPPING

Y. Kanemitsu and T. Ogawa
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Y. Kanemitsu: Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Ogawa: Department of Applied Physics, Osaka City University, Sumiyoshi-ku, Osaka 558, Japan

Surface Review and Letters (SRL), 1996, vol. 03, issue 01, 1163-1166

Abstract: We have studied the decay dynamics of visible photoluminescence (PL) from nanometer-sized Si crystallites. The slow decay behavior of red PL in10−6−10−2-stime regions is characterized by a stretched exponential function. The temperature dependence of the effective PL decay rate coincides with that of variable-range hopping of carriers in two-dimensional systems. Thus, it is naturally considered that the slow decay PL is caused by the hopping-limited recombination of excitons in surface localized states.

Date: 1996
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DOI: 10.1142/S0218625X96002084

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