LEEM/STM STUDIES OF NONREACTIVE AND REACTIVE GROWTH ON SILICON SURFACES
I. S. T. Tsong
Additional contact information
I. S. T. Tsong: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504, USA
Surface Review and Letters (SRL), 1996, vol. 03, issue 02, 1305-1314
Abstract:
The nucleation and growth behavior of two very different systems are studied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). The first is a nonreactive system of Pb growth on theSi(100)surface at room temperature and the second is a reactive system in which nitride layers are formed onSi(111)during reaction withNH3at high temperatures. In both cases, the mobilities of the diffusing species have a strong influence on the resulting growth morphologies.
Date: 1996
References: Add references at CitEc
Citations:
Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X9600231X
Access to full text is restricted to subscribers
Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.
Export reference: BibTeX
RIS (EndNote, ProCite, RefMan)
HTML/Text
Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:03:y:1996:i:02:n:s0218625x9600231x
Ordering information: This journal article can be ordered from
DOI: 10.1142/S0218625X9600231X
Access Statistics for this article
Surface Review and Letters (SRL) is currently edited by S Y Tong
More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().