LEEM/STM STUDIES OF NONREACTIVE AND REACTIVE GROWTH ON SILICON SURFACES

I. S. T. Tsong
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I. S. T. Tsong: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504, USA

Surface Review and Letters (SRL), 1996, vol. 03, issue 02, 1305-1314

Abstract: The nucleation and growth behavior of two very different systems are studied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). The first is a nonreactive system of Pb growth on theSi(100)surface at room temperature and the second is a reactive system in which nitride layers are formed onSi(111)during reaction withNH3at high temperatures. In both cases, the mobilities of the diffusing species have a strong influence on the resulting growth morphologies.

Date: 1996
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DOI: 10.1142/S0218625X9600231X

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