ELECTRON DIFFRACTION AND PHOTOEMISSION STUDIES OF CLEAN AND WATER-COVEREDSi(5,5,12)ANDSi(112)SURFACES

W. Ranke and Y. R. Xing
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W. Ranke: Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin (Dahlem), Germany
Y. R. Xing: State Key Laboratory for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China

Surface Review and Letters (SRL), 1997, vol. 04, issue 01, 15-23

Abstract: The structure of silicon surfaces in the orientation range (113)–(5,5,12)–(337)–(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3° from (113) and 0.7° from (337)] is the only stable orientation between (113) and (111) and confirm the result of Baskiet al.[Science269, 1556 (1995)] that it has a2 × 1superstructure with a very large unit cell of7.68 × 53.5 Å2. Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

Date: 1997
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DOI: 10.1142/S0218625X97000043

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