PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100)INTERFACE WITH SYNCHROTRON RADIATION

Shihong Xu, Fapei Zhang, Erdong Lu, Xiaojiang Yu, Faqiang Xu, Changshang Xu, Pengshou Xu and Xinyi Zhang
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Shihong Xu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Fapei Zhang: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Erdong Lu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Xiaojiang Yu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Faqiang Xu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Changshang Xu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Pengshou Xu: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China
Xinyi Zhang: National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei, Anhui 230026, China

Surface Review and Letters (SRL), 1997, vol. 04, issue 01, 25-31

Abstract: Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage(

Date: 1997
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DOI: 10.1142/S0218625X97000055

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