EFFECT OF SURFACTANT AND SUBSTRATE TEMPERATURE ON THE GROWTH OFAgFILMS ON A SAPPHIRE SURFACE

T. Lewowski and P. Wieczorek
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T. Lewowski: Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
P. Wieczorek: Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

Surface Review and Letters (SRL), 1997, vol. 04, issue 02, 219-222

Abstract: The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.

Date: 1997
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DOI: 10.1142/S0218625X97000213

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