DIRECT MEASUREMENTS OF SURFACE STRESS USING TRANSMISSION ELECTRON MICROSCOPY

R. D. Twesten, J. M. Gibson and O. C. Hellman
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R. D. Twesten: Department of Physics, University of Illinois, 104 s. Goodwin Ave, Urbana, IL 61801, USA
J. M. Gibson: Department of Physics, University of Illinois, 104 s. Goodwin Ave, Urbana, IL 61801, USA
O. C. Hellman: NTT Basic Research Laboratory, Tokyo, Japan

Surface Review and Letters (SRL), 1997, vol. 04, issue 02, 245-269

Abstract: Surface stress and energy are concepts which are often misunderstood. In this work, we will clarify the difference between the two. We describe the use of transmission electron microscopy to measure surface stress by quantitative analysis of strain contrast images. We find that images of surface-stress-induced strain fields can be used to measure quantitative differences in surface stress provided the imaging parameters are accurately determined. We have applied this method to measure the stress difference between the7×7and high temperature "1×1" phases of the Si(111) surface at the phase coexistence temperature and between metastable phase boundaries on the Si(111) and amorphous-Ge interface. We discuss the significance of these measurements and pitfalls to be avoided in image simulations.

Date: 1997
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DOI: 10.1142/S0218625X97000249

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