METAL–INSULATOR TRANSITION IN THE Si(111)-(7×7) SURFACE

F. Flores, A. Levy Yeyati and J. Ortega
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F. Flores: Departamento de Física Teórica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
A. Levy Yeyati: Departamento de Física Teórica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
J. Ortega: Departamento de Física Teórica de la Materia Condensada C-V, Facultad de Ciencias, Universidad Autónoma de Madrid, E-28049 Madrid, Spain

Surface Review and Letters (SRL), 1997, vol. 04, issue 02, 281-286

Abstract: A model Hamiltonian, based on LDA calculations, is introduced for describing the behavior of the electrons filling the dangling bonds of the Si(111)-(7×7) surface. Our analysis of this model shows that this surface has a metallic character at room temperature and exhibits a metal–insulator transition for a temperature between 120 and 180 K. These properties are associated with the localization of electrons on some elementary structures having either a dimer or a hexagonal ring geometry.

Keywords: 73.20.-r; 71.30.+h (search for similar items in EconPapers)
Date: 1997
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DOI: 10.1142/S0218625X97000274

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