ELECTRONIC TRANSPORT IN EPITAXIAL FILMS STUDIED BY SCANNING PROBE TECHNIQUES

H. von Känel, H. Sirringhaus, T. Meyer and E. Y. Lee
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H. von Känel: Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland
H. Sirringhaus: Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland
T. Meyer: Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland
E. Y. Lee: Laboratorium für Festkörperphysik, ETH Zürich CH-8093 Zürich, Switzerland

Surface Review and Letters (SRL), 1997, vol. 04, issue 02, 307-318

Abstract: Hot electron transport in epitaxialCoSi2/Siheterostructures has been studiedin situby ballistic electron emission microscopy (BEEM) at 77 K. AtCoSi2/Si(111)interfaces elastic scattering at interfacial defects could be imaged with spatial resolution on a nanometer scale. Hot electron injection acrossCoSi2/n-Si(111)interfaces was found to be favored by interface scattering, in contrast to hot hole injection acrossCoSi2/p-Si(111), in agreement with expectations based on the projected Si band structure. Inelastic scattering within the metal film was found to become dominant at energies above~4eV, leading to a strong sensitivity of the BEEM current on film thickness variations. This could be exploited to generate maps of the film thickness distribution, facilitating the interpretation of quantum size effects (QSE's) which appear both in BEEM and in scanning tunneling spectroscopy. The variation of the BEEM current was found to be entirely due to scattering effects atCoSi2/Si(111)interfaces, the Schottky barrier height being constant. AtCoSi2/Si(100)interfaces, however, a pronounced decrease in the Schottky barrier height was observed at certain interfacial defects, some of which are not yet identified.

Keywords: 72.10.Fk; 61.16Ch; 73.20.Dx; 73.30.+y (search for similar items in EconPapers)
Date: 1997
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DOI: 10.1142/S0218625X97000304

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