INTERPLAY OF ELECTRONIC AND GEOMETRIC STRUCTURE IN A MODEL SYSTEM: EPITAXIAL IRON SILICIDES

E. G. Michel
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E. G. Michel: Dto. de Física de la Materia Condensada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049 Madrid, Spain

Surface Review and Letters (SRL), 1997, vol. 04, issue 02, 319-326

Abstract: In this article, the interplay between electronic and geometric properties in transition metal silicide systems is presented using as a model system Fe–Si binary compounds. When iron silicides are epitaxially grown on Si(111), several different phases can be obtained, depending on the preparation conditions. In particular, for a 1:1 Fe:Si stoichiometry, there are two different phases possible: FeSi(CsCl) and ∊-FeSi. The former is a metastable phase, stabilized through epitaxy, while the latter is the bulk-stable phase for a 1:1 composition. Although the two have nominally the same composition, their different structures give rise to distinct electronic properties in each material. Their electronic structures have been probed by angle-resolved photoemission. In this article the results of this analysis will be presented along with the main properties of both compounds.

Date: 1997
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DOI: 10.1142/S0218625X97000316

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