TRANSMISSION ELECTRON MICROSCOPY OF SURFACE AND INTERFACIAL STEPS

J. M. Gibson, X. Chen and O. Pohland
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J. M. Gibson: Department of Physics, University of Illinois, 1110 W Green St, Urbana, IL 61801, USA
X. Chen: Department of Physics, University of Illinois, 1110 W Green St, Urbana, IL 61801, USA
O. Pohland: Department of Physics, University of Illinois, 1110 W Green St, Urbana, IL 61801, USA

Surface Review and Letters (SRL), 1997, vol. 04, issue 03, 559-566

Abstract: Transmission electron microscopy is uniquely able to extend techniques for imaging free surface steps to the buried interface regime, without significant loss of detail. Two mechanisms for imaging surface and interfacial steps by transmission electron microscopy are described. They are thickness contrast and strain contrast. The former reveals the position and approximate height of steps, whereas the latter detects stress fields which are commonly associated with steps. The basis for each of these methods is elaborated, and preliminary results are shown for step images atSi/SiO2interfaces, where measurable stress fields have been directly detected for the first time.

Date: 1997
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DOI: 10.1142/S0218625X97000547

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