ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTION

R. Lüthi (), E. Meyer, M. Bammerlin, A. Baratoff, L. Howald, Ch. Gerber and H.-J. Güntherodt
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R. Lüthi: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
E. Meyer: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
M. Bammerlin: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
A. Baratoff: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
L. Howald: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
Ch. Gerber: IBM Research Laboratory Zurich, Switzerland
H.-J. Güntherodt: Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Surface Review and Letters (SRL), 1997, vol. 04, issue 05, 1025-1029

Abstract: In this note we report the first observation of salient features of the Si(111)(7×7) reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shiftΔfof the Si cantilever and of the mean tunneling current$\bar I_t$from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control viaΔfis problematic, whereas it is as successful as in conventional STM via$\bar I_t$. Furthermore, local dissipation (energy loss of10-14W) through individual atoms is observed and explained by the coupling of the surface atoms to phonons.

Date: 1997
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DOI: 10.1142/S0218625X9700122X

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