ON THE THEORY OF THE ADSORPTION OF A GAS ON A SEMICONDUCTOR

V. M. Aroutiounian and G. S. Aghababian
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V. M. Aroutiounian: Yerevan State University, 1. Manoukian St. 375049, Yerevan, Armenia
G. S. Aghababian: Yerevan State University, 1. Manoukian St. 375049, Yerevan, Armenia

Surface Review and Letters (SRL), 1997, vol. 04, issue 05, 1059-1061

Abstract: It is shown that a charging of the surface of a semiconductor by electrons can lead to an effective increase of the desorption, a new term in the kinetic equation and as a result the appearance of new regularities — both in the adsorption isotherm and in the kinetic equation. We point out the range of applications of the Langmuir and Henry theories as well as mentioned references where one observed root dependences of the surface conduction on the pressure by experiment.

Date: 1997
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DOI: 10.1142/S0218625X97001309

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