Sb/Cu(111): GROWTH, DISSOLUTION AND SEGREGATION STUDIED BY AES, LEED and PES
M. Göthelid (),
B. Aufray,
H. Giordano,
J. M. Gay,
G. Le Lay,
R. Belkhou,
N. Marsot and
C. Guillot
Additional contact information
M. Göthelid: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
B. Aufray: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
H. Giordano: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
J. M. Gay: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
G. Le Lay: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France;
R. Belkhou: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France
N. Marsot: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France
C. Guillot: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France
Surface Review and Letters (SRL), 1997, vol. 04, issue 06, 1203-1207
Abstract:
The room temperature deposition ofSbon toCu(111)gives rise to two differentSbstates as seen from theSb4d shallow core level: an adstate similar to the$(\sqrt{3}\times\sqrt{3}){\rm R}30^\circ$structure formed after annealing at 400°C, and an overlayer of unreactedSb. The unreacted Sb overlayer is rapidly dissolved into a subsurface position in the crystal during annealing, where it forms a quasistable structure which is dissolved very slowly.
Date: 1997
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DOI: 10.1142/S0218625X97001541
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