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Sb/Cu(111): GROWTH, DISSOLUTION AND SEGREGATION STUDIED BY AES, LEED and PES

M. Göthelid (), B. Aufray, H. Giordano, J. M. Gay, G. Le Lay, R. Belkhou, N. Marsot and C. Guillot
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M. Göthelid: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
B. Aufray: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
H. Giordano: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
J. M. Gay: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France
G. Le Lay: CRMC2-CNRS, Campus de Luminy, case 913, F-13288 Marseille cedex 9, France;
R. Belkhou: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France
N. Marsot: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France
C. Guillot: LURE, Bât. 209D, Centre Universitaire Paris-Sud, F-91405 Orsay, France

Surface Review and Letters (SRL), 1997, vol. 04, issue 06, 1203-1207

Abstract: The room temperature deposition ofSbon toCu(111)gives rise to two differentSbstates as seen from theSb4d shallow core level: an adstate similar to the$(\sqrt{3}\times\sqrt{3}){\rm R}30^\circ$structure formed after annealing at 400°C, and an overlayer of unreactedSb. The unreacted Sb overlayer is rapidly dissolved into a subsurface position in the crystal during annealing, where it forms a quasistable structure which is dissolved very slowly.

Date: 1997
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DOI: 10.1142/S0218625X97001541

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