Atomic Structure of Si(100) Surfaces

Ja-Yong Koo, Jae-Yel Yi (), Chanyong Hwang, Dal-Hyun Kim, Sekyung Lee, Young-Jo Ko, K. J. Chang and Dong-Hyuk Shin
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Ja-Yong Koo: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Jae-Yel Yi: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Chanyong Hwang: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Dal-Hyun Kim: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Sekyung Lee: Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea
Young-Jo Ko: Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea
K. J. Chang: Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea
Dong-Hyuk Shin: Department of Physics, Dongguk University, Pildong 3-26, Chung-Ku, Seoul 100-715, Korea

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 1-4

Abstract: The structure of a clean Si(100) and a Ni-contaminated si(100) was investigated using scanning tunneling microscopy. The clean Si (100) shows the2 × 1reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces2 × nreconstructions. The formation of vacancy clusters is favored. A rebondedSBstep is preferred on the clean Si(100) while a nonrebondedSBstep with a split-off dimer is mainly observed on the Ni-contaminated Si(100) and in the vicinity of dimer vacancies of the lower terrace on the clean Si(100).

Date: 1998
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DOI: 10.1142/S0218625X98000037

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