AR-PES Study of the Single Domain Si(100)-(2 × 1)Pb Surface

S. Odasso, M. Göthelid, V. Yu. Aristov, G. Le Lay (), H. J. Kim, T. Buslaps and R. L. Johnson
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S. Odasso: CRMC2-CNRS, Campus de Luminy, Case 913, F-13288 Marseille, Cedex 9, France;
M. Göthelid: CRMC2-CNRS, Campus de Luminy, Case 913, F-13288 Marseille, Cedex 9, France;
V. Yu. Aristov: CRMC2-CNRS, Campus de Luminy, Case 913, F-13288 Marseille, Cedex 9, France;
G. Le Lay: CRMC2-CNRS, Campus de Luminy, Case 913, F-13288 Marseille, Cedex 9, France;
H. J. Kim: Institute of Experimental Physics, University of Hamburg, Luruper Chaussee 149, D-2000 Hamburg 52, Germany
T. Buslaps: Institute of Experimental Physics, University of Hamburg, Luruper Chaussee 149, D-2000 Hamburg 52, Germany
R. L. Johnson: Institute of Experimental Physics, University of Hamburg, Luruper Chaussee 149, D-2000 Hamburg 52, Germany

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 5-7

Abstract: Having detected two surface states in the valence band spectra of the single domain Si(100) surface covered with an ordered lead monolayer (2 × 1reconstruction), we follow their dispersions along the ΓJ direction of the surface Brillouin zone. Evidence is also given of the persistence of silicon dimers at the interface.

Date: 1998
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DOI: 10.1142/S0218625X98000049

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