Evolution and Degeneration of Dimer-Adatom-Stacking-Fault Structure in Solid-Phase Epitaxy on Si(111) Surface Observed by Scanning Tunneling Microscopy

Z. Zhang (), M. A. Kulakov and B. Bullemer
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Z. Zhang: Universität der Bundeswehr München, Fakultät für Elektrotechnik, Institute für Physik, D-85577 Neubiberg, Germany
M. A. Kulakov: Universität der Bundeswehr München, Fakultät für Elektrotechnik, Institute für Physik, D-85577 Neubiberg, Germany
B. Bullemer: Universität der Bundeswehr München, Fakultät für Elektrotechnik, Institute für Physik, D-85577 Neubiberg, Germany

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 21-25

Abstract: Large unit cells of dimer-adatom-stacking-fault structure and related2 × 2and c(4 × 2) reconstructions have been prepared by low-temperature solid-phase epitaxy and observed by scanning tunneling microscopy. The size-different unit cells of the DAS structure are considered to be a structure evolution in which more electron charge transfers in a larger unit cell from the adatom dangling bonds to the rest-atom dangling bonds. In some cases the DAS structure can degenerate into triangular2 × 2domains and bundlinke c(4 × 2) domains. The rest atoms are always fully filled by electrons due to the charge transfer. The adatom dangling bonds are partially filled in a c(4 × 2) symmetry and essentially empty in a2 × 2symmetry. As a result, the rest atoms in2 × 2domains can be imaged without the adatom protrusions while in the c(4 × 2) domains the protrusions of the adatoms and the rest atoms appear in zigzag chains, when the sample is negatively biased.

Date: 1998
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DOI: 10.1142/S0218625X98000074

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