LEEM Determination of Critical Terrace Widths for Si/Si(111) Step Flow Growth

M. S. Altman, W. F. Chung and T. Franz
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M. S. Altman: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
W. F. Chung: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
T. Franz: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 27-30

Abstract: The condition for step flow growth of Si on the Si(111)-(7 × 7) surface has been investigated using low energy electron microscopy (LEEM). The critical terrace width for step flow growth was found to be independent of the azimuthal direction. This is consistent with isotropic diffusion and step flow kinetics. The dependence of the critical terrace width upon temperature for fixed incident flux (0.1 monolayer/minute) has also been measured. The square of the critical terrace width exhibits an Arrhenius behavior between 750 and 80 K with prefactorA = 7.0 × 1019 nm2and activation energyE = 2.05 eV. These values are significantly larger than those determined by Iwanariet al.[J. Cryst. Growth119, 241 (1992)] at lower temperatures and similar flux. Possible origins of this discrepancy, including the validity of the Arrhenius description, are discussed.

Date: 1998
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DOI: 10.1142/S0218625X98000086

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