Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate

J.-M. Gay, L. Lapéna, M. Ladevèze and M. Tolan
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J.-M. Gay: CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France
L. Lapéna: CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France
M. Ladevèze: CRMC2-CNRS, (Laboratory associated with the Universités d'Aix-Marseille II and III.) Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France
M. Tolan: Institut für Experimentalphysik, Christian-Albrechts-Universität, Olshausentrasse 40-60, 24098 Kiel, Germany

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 31-36

Abstract: We present the results of an X-ray analysis of the surface morphology of a sample obtained by Si MBE onto a higly misoriented Si(111) substrate. X-ray reflectivity and diffuse scattering provide a description of the surface. The amplitude of the surface profile is about 6.6 nm, with a sawtooth shape. Satellites in the diffuse scattering indicate a 215±5 nm periodicity int he miscut direction. The analysis of satellite intensities shows an asymmetry of the surface shape. The results are in agreement with AFM images of the surface.

Date: 1998
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DOI: 10.1142/S0218625X98000098

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