Interfacial Modification Induced by Equilibrium Segregation in Ge(S) Bicrystal

A. Charaï, L. Fares, C. Alfonso, L. Roussel and J. L. Rouviere
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A. Charaï: EDIFIS-URA 443, Laboratoire de Métallurgie, Faculté des Sciences et Techniques de St Jérôme, F-13397 Marseille cedex 20, France
L. Fares: EDIFIS-URA 443, Laboratoire de Métallurgie, Faculté des Sciences et Techniques de St Jérôme, F-13397 Marseille cedex 20, France
C. Alfonso: EDIFIS-URA 443, Laboratoire de Métallurgie, Faculté des Sciences et Techniques de St Jérôme, F-13397 Marseille cedex 20, France
L. Roussel: EDIFIS-URA 443, Laboratoire de Métallurgie, Faculté des Sciences et Techniques de St Jérôme, F-13397 Marseille cedex 20, France
J. L. Rouviere: Département de Recherche Fondamentale sur la Matiére Condensée, SP2/S-CENG, F-38041 Grenoble, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 43-47

Abstract: An original experimental procedure is set up in order to relate unambiguously the equilibrium impurity segregation in a grain boundary to the structural modifications. This is clearly established in the case of the Ge(S) Σ=25 grain boundary. Using HREN, EDS and EELS, we show that the sulfur segregation occurs on the dislocation cores of the grain boundary and that it stabilizes the lowest energy structures of the initial one.

Date: 1998
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DOI: 10.1142/S0218625X98000116

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