Si(111)-(7 × 7) Under Silane UHV-LPCVD: A STM Study

L. Masson, D. Albertini, F. Thibaudau and F. Salvan
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L. Masson: Groupe de Physique des Etats Condensés. URA CNRS 783, Université de la Méditerranée, Faculté des Sciences de Luminy, Case 901, 13288 Marseille cedex 09, France
D. Albertini: Groupe de Physique des Etats Condensés. URA CNRS 783, Université de la Méditerranée, Faculté des Sciences de Luminy, Case 901, 13288 Marseille cedex 09, France
F. Thibaudau: Groupe de Physique des Etats Condensés. URA CNRS 783, Université de la Méditerranée, Faculté des Sciences de Luminy, Case 901, 13288 Marseille cedex 09, France
F. Salvan: Groupe de Physique des Etats Condensés. URA CNRS 783, Université de la Méditerranée, Faculté des Sciences de Luminy, Case 901, 13288 Marseille cedex 09, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 55-61

Abstract: In this work, we present a scanning tunneling microscopy (STM) study of the LPCVD (low pressure chemical vapor deposition) growth of Si on Si(111)-(7 × 7) using silane (SiH4) decomposition. Surface reactivities have been studied at room and high temperature(700

Date: 1998
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DOI: 10.1142/S0218625X9800013X

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