Comparison Between the Reaction Mechanisms of Nitridation of Si(100) by a NH3Molecular Beam and by a$\rm{N}^+_2$Ion Beam

I. Kusunoki (), S. Ishidzuka, Y. Igari and T. Takaoka
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I. Kusunoki: Research Institute for Scientific Measurements, Tohoku University, Katahira 2-1-1, Aobaku, Sendai 980-77, Japan
S. Ishidzuka: Research Institute for Scientific Measurements, Tohoku University, Katahira 2-1-1, Aobaku, Sendai 980-77, Japan
Y. Igari: Research Institute for Scientific Measurements, Tohoku University, Katahira 2-1-1, Aobaku, Sendai 980-77, Japan
T. Takaoka: Research Institute for Scientific Measurements, Tohoku University, Katahira 2-1-1, Aobaku, Sendai 980-77, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 81-84

Abstract: Nitridation of a Si(100) surface takes place with NH3at temperatures higher than 600°C and with a low energy$\rm{N}^+_2$ion beam at room temperature, formating a thin film of nitride. The nitridation processes have been studiedin situunder ultrahigh vacuum by X-ray photoelectron spectroscopy (XPS). The reaction with NH3occurs on the surface with Si atoms supplied by out-diffusion from the substrate, producing a nitride film. On the other hand, the N atoms of the low energy$\rm{N}^+_2$ion beam (100–1000 eV) penetrate into the bulk by their kinetic energy and form the nitride layer near the surface. The difference of these mechanisms is clearly observed in the evolution of the N1s and Si2p XPS spectra during the reaction.

Date: 1998
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DOI: 10.1142/S0218625X98000177

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