Atomic Structure of a Monolayer of Ge on Si(001)(2 × 1)

S. J. Jenkins and G. P. Srivastava
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S. J. Jenkins: Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK
G. P. Srivastava: Department of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 97-100

Abstract: We present results of first-principles pseudopotential calculations for an ordered monolayer growth of Ge on Si(001)(2 × 1). Our results strongly support the asymmetric Ge–Ge dimer model. We also provide a detailed discussion on the nature of the bonding within the overlayer and between the overlayer and the substrate.

Date: 1998
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DOI: 10.1142/S0218625X98000207

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