Photoemission Study of K Doping on a Monolayer of C60on Clean Si(001)-(2 × 1) Surface

Tun-Wen Pi, Le-Hong Hong, Rong-Tzong Wu, Chiu-Ping Cheng and May-Ho Ko
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Tun-Wen Pi: Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC
Le-Hong Hong: Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC
Rong-Tzong Wu: Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC
Chiu-Ping Cheng: Department of Physics, National Tsing Hua University, Hsinchu, Taiwan, ROC
May-Ho Ko: Department of Materials Science, National Tsing Hua University, Hsinchu, Taiwan, ROC

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 101-104

Abstract: We present the first valence band photoemission study of a monolayerKxC60on a clean Si(001)-(2 × 1) surface. The monolayer C60which shows weak interaction with the silicon surface reveals clear, but broadened, structures corresponding to bulkC60. Upon K exposure, the work function drops rapidly due to charge polarization toward the Si surface, considerably affecting then the rate of the Lumo filling. Its centroid initially shown at 0.6 eV shifts to higher binding energy with higher concentration. Moreover, the LUMO always separates 1.5 ± 0.1 eV from the Homo. Features associated with the many-body effect do not appear in the spectra. The Fermi cutoff has never been observed, indicating the insulating nature of theKxC60surface.

Date: 1998
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DOI: 10.1142/S0218625X98000219

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