Epitaxial Growth of Sb/Ge/Si(111) Studied by Photoelectron Diffraction

C. Westphal, F. Sökeland, S. Dreiner and H. Zacharias
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C. Westphal: Institut für Laser- und Plasmaphysik, Universität -GH Essen, Universitätsstr. 5, 45117 Essen, Germany
F. Sökeland: Institut für Laser- und Plasmaphysik, Universität -GH Essen, Universitätsstr. 5, 45117 Essen, Germany
S. Dreiner: Institut für Laser- und Plasmaphysik, Universität -GH Essen, Universitätsstr. 5, 45117 Essen, Germany
H. Zacharias: Institut für Laser- und Plasmaphysik, Universität -GH Essen, Universitätsstr. 5, 45117 Essen, Germany

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 151-155

Abstract: X-ray photoelectron diffraction is used to investigate the epitaxial growth of thin high quality Ge films on Si(111). Several Ge films have been prepared with varying coverages with and without Sb terminating the interface towards the vacuum. The measured photoelectron pattern for monolayer Ge films exhibits only intralayer diffraction maxima due to the double layers formed by the Ge diamond structure. For thicker films interlayer scattering between two adjacent layers can be observed as well.

Date: 1998
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DOI: 10.1142/S0218625X98000293

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