Surfactant-Mediated Growth of Ge/Si(001) Interface Studied by XPD

R. Gunnella, P. Castrucci, N. Pinto, P. Cucculelli, I. Davoli, D. Sébilleau and M. De Crescenzi
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R. Gunnella: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
P. Castrucci: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
N. Pinto: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
P. Cucculelli: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
I. Davoli: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
D. Sébilleau: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy
M. De Crescenzi: Dipartimento di Matematica e Fisica, Sezione INFM, Universitá di Camerino, Via Madonna delle Carceri, 62032 Camerino (MC), Italy

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 157-161

Abstract: The influence of Sb as a surfactant on the formation of Si/Ge interface is studied by means of XPD (X-ray photoelectron diffraction) and AED (Auger electron diffraction) from Ge and Si core levels. The technique employed is particularly suitable for checking the film tetragonal distortion, the growth morphology and the sharpness of the interface. We found a layer by layer growth mode for 3 ML of Ge on Si(001) and related values of strain of the film close to the value predicted by the elastic theory which enforces the use of such a surfactant to obtain high quality and sharp heterostructures. In addition, studying the influence of 3 ML of the Si cap layer on the 3 ML Ge, we obtain no indication of Ge segregation into the Si cap layer. Finally, evidences of quality degradation after high temperature(T > 600°C)annealing are shown.

Date: 1998
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DOI: 10.1142/S0218625X9800030X

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