The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$Reconstruction

P. B. Howes, K. A. Edwards, J. E. Macdonald, T. Hibma, T. Bootsman, M. A. James and C. L. Nicklin
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P. B. Howes: Department of Physics and Astronomy, University of Wales College of Cardiff, PO Box 913, Cardiff CF4 1UD, UK
K. A. Edwards: Department of Physics and Astronomy, University of Wales College of Cardiff, PO Box 913, Cardiff CF4 1UD, UK
J. E. Macdonald: Department of Physics and Astronomy, University of Wales College of Cardiff, PO Box 913, Cardiff CF4 1UD, UK
T. Hibma: Department of Chemical Physics, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
T. Bootsman: Department of Chemical Physics, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
M. A. James: Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK
C. L. Nicklin: Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 163-166

Abstract: The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb atoms and we have previously shown that there are structural differences between theburiedinterfaces.We present surface X-ray diffraction measurements of the interface grown from the incommensurate${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}R30^{\circ}\mbox{-}{\rm Pb}$reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between unreconstructed, bulk-like Si(111) and disordered, bulk-like Pb(111). This interface is contrasted with the interface formed by growth on the Si(111)-(7 × 7)-Pb reconstruction at which the starting reconstruction is preserved.

Date: 1998
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DOI: 10.1142/S0218625X98000311

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