Monolayer Nitrogen Atom Incorporation at BuriedSi-SiO2Interfaces: Preparation by Remote Plasma Oxidation/Nitridation and Characterization by On-Line Auger Electron Spectroscopy

G. Lucovsky (), H Niimi, K. Koh and M. L. Green
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G. Lucovsky: Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleig, NC 27695-8202, USA
H Niimi: Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleig, NC 27695-8202, USA
K. Koh: Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleig, NC 27695-8202, USA
M. L. Green: Lucent Bell Laboratories, Murray Hill, NJ 07979, USA

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 167-173

Abstract: This paper presents experimental studies in which N-atoms have been incorporated atSi-SiO2interfaces by forming the interface and oxide film by a 300°C remote-plasma-assisted nitridation/oxidation process usingN2O. Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Based on AES studies usingN2O,O2and sequencedN2OandO2source gases, reaction pathways for (i) N-atom incorporation at and/or (ii) removal from buriedSi-SiO2interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing.

Date: 1998
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DOI: 10.1142/S0218625X98000323

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