Atomic Structure of Hexagonal 6H– and 3C–SiC Surfaces

J. Schardt, J. Bernhardt, U. Starke and K. Heinz
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J. Schardt: Lehrstuhl für festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany
J. Bernhardt: Lehrstuhl für festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany
U. Starke: Lehrstuhl für festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany
K. Heinz: Lehrstuhl für festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 181-186

Abstract: The crystallography of hexagonal SiC surfaces preparedex situby chemical methods was investigated by low energy electron diffraction (LEED) structure analysis. The surface morphology was analyzed by considering mixtures of domains with different surface layer stacking geometries. On the 6H–SiC(0001) surface ABCACB stacking is the dominating termination, covering about 80% of the surface. On$6{\rm H}-{\rm SiC(000\bar{1})$all three possible surface stacking sequences are present. The (111) surface of a 3C–SiC film sample shows linear stacking of layers with only one domain orientation present. In contrast to the carbon-terminated 6H sample, the silicon-terminated surfaces are covered by an oxygen layer with the adatoms bound on top of silicon.

Date: 1998
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DOI: 10.1142/S0218625X98000347

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