The$(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$-Reconstructed 6H–SiC(0001): A Semiconducting Surface

I. Forbeaux, J.-M. Themlin, V. Langlais, L. M. Yu, H. Belkhir and J.-M. Debever
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I. Forbeaux: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France
J.-M. Themlin: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France
V. Langlais: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France
L. M. Yu: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France;
H. Belkhir: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France
J.-M. Debever: Groupe de Physique des Etats Condensés, URA CNRS 783, Faculté des Sciences de Luminy, case 901, F-13288 MARSEILLE Cedex 9, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 193-197

Abstract: k//-resolved inverse-photoemission spectroscopy of the$(\sqrt{3}\times\sqrt{3}){\rm R}30^{\circ}$reconstruction of 6H–SiC(0001) reveals a sharp surface stateUlocated 1.10±0.05 eV above the Fermi level at the center of the surface Brillouin zone with a total bandwidth of 0.34±0.05 eV. This value is in good agreement with recent LDA calculations which predict an adatom-induced surface stateΣ1which should be half-filled. In this model, the adatoms are Si atoms occupying theT4site above a compact SiC(0001) (Si) termination. In contrast to the predicted metallic behavior, theUstate remains completely unoccupied throughout the whole Brillouin zone, and the surface is semiconducting. We propose that some charge transfer from the Si adatoms towards subsituted C atoms in the terminating bilayer stabilizes the reconstruction by moving up theΣ1state away from the Fermi level.

Date: 1998
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DOI: 10.1142/S0218625X98000360

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