Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology

F. Semond, L. Douillard, P. Soukiassian, A. Mayne, G. Dujardin, L. Di Cioccio and C. Jaussaud
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F. Semond: Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
L. Douillard: Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
P. Soukiassian: Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
A. Mayne: Laboratoire de Photophysique Moléculaire, Bâtiment 213, Université de Paris-Sud, 91405 Orsay Cedex, France
G. Dujardin: Laboratoire de Photophysique Moléculaire, Bâtiment 213, Université de Paris-Sud, 91405 Orsay Cedex, France
L. Di Cioccio: LETI (CEA-Technologies Avancées), DMEL, CEN/G, 85 X, 38041 Grenoble Cedex, France
C. Jaussaud: LETI (CEA-Technologies Avancées), DMEL, CEN/G, 85 X, 38041 Grenoble Cedex, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 207-211

Abstract: We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the3×2array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a3×2arrangement at a 1/3 Si mon/layer coverage.

Date: 1998
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DOI: 10.1142/S0218625X98000384

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