Atomic Structure of the GaAs(001)-β2(2 × 4) Surface

G. P. Srivastava and S. J. Jenkins
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G. P. Srivastava: Physics Department, University of Exeter, Stocker Road, Exeter EX4 4QL, UK
S. J. Jenkins: Physics Department, University of Exeter, Stocker Road, Exeter EX4 4QL, UK

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 219-222

Abstract: We present detailed results ofab initiopseudopotential calculations for equilibrium atomic geometry and chemical bonding on the arsenic-terminated GaAs(001)-β2(2 × 4) surface. We find that this surface is characterized by the presence of two distinct Ga-As bond lengths between the first and second surface layers. This feature is due to the presence of both threefold- and fourfold-coordinated Ga atoms in the second layer.

Date: 1998
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DOI: 10.1142/S0218625X98000402

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