An ISS Study of Ga-Dimer Arrangement in the GaP(001)-(4 × 2) Surface

N. Oishi, F. Shoji, A. Konishi, M. Naitoh and S. Nishigaki ()
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N. Oishi: Kumamoto National College of Technology, Kumamoto 861-11, Japan
F. Shoji: Kyushu Kyoritsu University, Yahatanishi, Kitakyushu 807, Japan
A. Konishi: Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan
M. Naitoh: Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan
S. Nishigaki: Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 223-227

Abstract: A GaP(001) Ga-rich surface produced by ion sputtering followed by annealing exhibited a4 × 2LEED pattern with half streaks in the [110] direction. We have studied the structure of this surface by low-energy ion-scattering spectroscopy (ISS) using alkali ions (Na+) .We have found a unit cell of the4 × 2structure consisting of two Ga dimers plus two dimer vacancies from the measured incidence-angle dependence of the scattered-ion intensity in the$[1\bar{1}0]$surface azimuth and an atomic separation in the Ga dimer being about 0.27 nm from that in the [110] surface azimuth. Evidence is presented showing the unit structures being arranged irregularly in the$[1\bar{1}0]$direction around the twofold positions.

Date: 1998
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DOI: 10.1142/S0218625X98000414

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