Structural and Spectroscopic Investigation of the In-Terminated InAs(100)(4 × 2)/c(8 × 2)Reconstruction
Alfred Kahn and
G. Le Lay
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C. Kendrick: Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
G. Le Lay: Centre de Recherche sur les Mécanismes de la Croissance Cristalline-CNRS, Campus de Luminy, Case 913, F-13288 Marseille Cedex 9, France
Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 229-234
We investigate the In-rich(4 × 2)/c(8 × 2)reconstruction of InAs(100) via low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). LEED shows a highly ordered surface with a mixture of(4 × 2)andc(8 × 2)phases. Atomic-resolution STM images are consistent with a previously proposed model for the(4 × 2)surface where the unit cell contains one In dimer in the first layer and two In dimers in the third layer. A defect identified at the transition between(4 × 2)andc(8 × 2)phases appears as two bright spots located in the middle of the top In-dimer rows in filled-state images. The spots are absent in empty-state images but are replaced by intensity due to empty In dangling bonds. We discuss possible origins of this defect based on either the presence of excess In or a sulfur dopant atom.
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