Adsorption of Al on GaN(110) Surface

Jianjun Xie, Jiang Ping, Kaiming Zhang and Xide Xie
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Jianjun Xie: Department of Physics, Fudan University, Shanghai 200433, P. R. China
Jiang Ping: Department of Physics, Fudan University, Shanghai 200433, P. R. China
Kaiming Zhang: Department of Physics, Fudan University, Shanghai 200433, P. R. China
Xide Xie: Department of Physics, Fudan University, Shanghai 200433, P. R. China

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 269-272

Abstract: The electronic properties of Al deposited on GaN(110) surface with different adsorption geometries have been studied by using the surface linear muffin tin orbital approach. The layer projected density of states for Al-covered GaN(110) surface is calculated and compared with that of the clean surface. The charge distribution before and after the adsorption of Al are investigated. It is found that the deposited Al atoms prefer to bond with the surface N atoms with some charge transferred from Al to the GaN substrate. Finally, the Al-Ga exchange mechanism is also studied and it is found that the adsorbed Al may replace the second layer Ga atom to form a more stable configuration.

Date: 1998
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DOI: 10.1142/S0218625X98000499

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