Epitaxy of 3d Metals on Semiconductors

Xiaofeng Jin ()
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Xiaofeng Jin: Fudan T. D. Lee Physics Laboratory and Surface Physics Laboratory, Fudan University, Shanghai 200433, China;

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 273-278

Abstract: Growth of fcc Mn on GaAs(001), as an example of the lattice-mismatched epitaxy of 3d metals on semiconductors, has been studied using reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and the high resolution transmission electron microscope (HRTEM). The result shows that the interface structure plays a critical role in the epitaxial growth of 3d metals on semiconductors. A new recipe is proposed to search for more epitaxially grown 3d metal phases.

Date: 1998
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DOI: 10.1142/S0218625X98000505

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